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www.irf.com 1 12/07/04 notes through are on page 10 description this digital audio hexfet ? is specifically designed for class-d audio amplifier applications. this mosfet utilizes the latest processing techniques to achieve low on-resistance per silicon area. furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-d audio amplifier performance factors such as efficiency, thd and emi. additional features of this mosfet are 175c operating junction temperature and repetitive avalanche capability. these features combine to make this mosfet a highly efficient, robust and reliable device for class-d audio amplifier applications.
features advanced process technology key parameters optimized for class-d audio amplifier applications low r dson for improved efficiency low q g and q sw for better thd and improved efficiency low q rr for better thd and lower emi 175c operating junction temperature for ruggedness repetitive avalanche capability for robustness and reliability multiple package options lead-free s d g
v ds -55 v r ds(on) typ. @ v gs = -10v 93 m r ds(on) typ. @ v gs = -4.5v 150 m q g typ. 31 nc t j max 175 c key parameters irlr9343pbf irlu9343pbf IRLU9343-701PBF i-pak leadform 701 irlu9343-701 refer to page 10 for package outline d-pak irlr9343 i-pak irlu9343 absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ -10v a i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t c = 25c power dissipation w p d @t c = 100c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range clamping pressure n thermal resistance parameter typ. max. units r jc junction-to-case ??? 1.9 r ja junction-to-ambient (pcb mounted) ??? 50 c/w r ja junction-to-ambient (free air) ??? 110 max. -14 -60 20 -55 -20 -40 to + 175 ??? 79 39 0.53

2 www.irf.com s d g electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage -55 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? -52 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 93 105 m ? ??? 150 170 v gs(th) gate threshold voltage -1.0 ??? ??? v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -3.7 ??? mv/c i dss drain-to-source leakage current ??? ??? -2.0 a ??? ??? -25 i gss gate-to-source forward leakage ??? ??? -100 na gate-to-source reverse leakage ??? ??? 100 g fs forward transconductance 5.3 ??? ??? s q g total gate charge ??? 31 47 q gs gate-to-source charge ??? 7.1 ??? v gs = -10v q gd gate-to-drain charge ??? 8.5 ??? i d = -14a q godr gate charge overdrive ??? 15 ??? see fig. 6 and 19 t d(on) turn-on delay time ??? 9.5 ??? t r rise time ??? 24 ??? t d(off) turn-off delay time ??? 21 ??? ns t f fall time ??? 9.5 ??? c iss input capacitance ??? 660 ??? c oss output capacitance ??? 160 ??? pf c rss reverse transfer capacitance ??? 72 ??? c oss effective output capacitance ??? 280 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a e ar repetitive avalanche energy mj diode characteristics parameter min. typ. max. units i s @ t c = 25c continuous source current ??? ??? -20 (body diode) a i sm pulsed source current ??? ??? -60 (body diode) v sd diode forward voltage ??? ??? -1.2 v t rr reverse recovery time ??? 57 86 ns q rr reverse recovery charge ??? 120 180 nc v gs = -4.5v, i d = -2.7a ??? 120 see fig. 14, 15, 17a, 17b v ds = v gs , i d = -250a v ds = -55v, v gs = 0v v ds = -55v, v gs = 0v, t j = 125c v gs = -20v v gs = 20v i d = -14a typ. max. ? = 1.0mhz, see fig.5 v gs = 0v, v ds = 0v to -44v v gs = 0v t j = 25c, i f = -14a di/dt = 100a/s t j = 25c, i s = -14a, v gs = 0v showing the integral reverse p-n junction diode. conditions v gs = 0v, i d = -250a reference to 25c, i d = -1ma v gs = -10v, i d = -3.4a mosfet symbol r g = 2.5 ? v ds = -25v, i d = -14a v ds = -44v conditions and center of die contact v dd = -28v, v gs = -10v v ds = -50v

www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c -2.5v vgs top -15v -12v -10v -8.0v -5.5v -4.5v -3.0v bottom -2.5v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 175c -2.5v vgs top -15v -12v -10v -8.0v -5.5v -4.5v -3.0v bottom -2.5v 0.0 5.0 10.0 15.0 -v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 - i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = -25v 60s pulse width t j = 25c t j = 175c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -14a v gs = -10v 1 10 100 -v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 1020304050 q g total gate charge (nc) 0 4 8 12 16 20 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -44v vds= -28v vds= -11v i d = -14a for test circuit see figure 19

4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 10. threshold voltage vs. temperature fig 9. maximum drain current vs. case temperature fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 25 50 75 100 125 150 175 t j , junction temperature (c) 0 4 8 12 16 20 - i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 - v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = -250a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 1.162 0.000512 0.7370 0.002157 j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci= i / ri ci= i / ri 1 10 100 1000 -v ds , drain-tosource voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec

www.irf.com 5 fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14. typical avalanche current vs.pulsewidth fig 15. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 17a, 17b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 4.0 6.0 8.0 10.0 -v gs , gate-to-source voltage (v) 0 100 200 300 400 500 600 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 125c i d = -14a 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -4.0a -5.5a bottom -14a 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = -14a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 tav (sec) 0.1 1 10 100 1000 - a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses. note: in no case should tj be allowed to exceed tjmax 0.01

6 www.irf.com fig 19a. gate charge test circuit fig 19b gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 16. for p-channel hexfet power mosfets
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? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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12 in the assembly line "a" as s e mbled on ww 16, 1999 example: wi t h as s e mb l y this is an irfr120 lot code 1234 year 9 = 199 9 dat e code week 16 part number logo international rectifier as s e mb l y lot code 916a irf u 120 34 ye ar 9 = 1999 dat e code or p = de s i gnat e s l e ad- f r e e product (optional) note: "p" in as s embly line position i ndi cates "l ead-f r ee" 12 34 we e k 1 6 a = as s e mb l y s i t e code part number irf u 120 line a logo lot code assembly international rectifier

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as s e mb l y example: wi t h as s e mb l y t his is an irfu120 ye ar 9 = 199 9 dat e code line a we e k 19 in the as sembly line "a" ass embled on ww 19, 1999 lot code 5678 part number 56 irfu120 internat ional logo rect ifier lot code 919a 78 note: "p" in as sembly line pos ition indicates "l ead-f ree" 56 78 assembly lot code rect ifier logo int ernat ional irf u120 part number we e k 19 dat e code year 9 = 1999 a = assembly site code p = de s i gnat e s l e ad-f r e e product (optional)

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tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl n otes : 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters ( inches ). 3 . outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch

10 www.irf.com data and specifications subject to change without notice. this product has been designed for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 12/04 repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 1.24mh, r g = 25 ? , i as = -14a. pulse width 400s; duty cycle 2%. this only applies for i-pak, l s of d-pak is measured between lead and center of die contact r is measured at t j of approximately 90c.
contact factory for mounting information limited by tjmax. see figs. 14, 15, 17a, 17b for repetitive avalanche information when d-pak mounted on 1" square pcb (fr-4 or g-10 material) . for recommended footprint and soldering techniques refer to application note #an-994 refer to d-pak package for part marking, tape and reel information. ! "#

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